HY628100A Datasheet, PDF (8/9 Pages) Hynix Semiconductor – 128Kx8bit CMOS SRAM

HY628100A Series
DATA RETENTION ELECTRIC CHARACTERISTIC
SYM
VDR
ICCDR
tCDR
tR
Parameter
Test Condition
Vcc for Data Retention
/CS1 > Vcc - 0.2V
CS2 < 0.2V or
> Vcc - 0.2V,
Vss<VIN<Vcc
Data Retention Current Vcc = 3.0V, /CS1>Vcc - 0.2V
CS2< 0.2V or > Vcc - 0.2V,
Vss<VIN<Vcc
Chip Deselect to Data Retention Time
Operating Recovery Time
Notes:
1. Typical values are under the condition of TA = 25°C.
2. tRC is read cycle time.
Min Typ Max Unit
2.0
-
-
V
L
-
2
LL
-
1
0
-
tRC(2) -
50 uA
10 uA
-
ns
-
ns
DATA RETENTION TIMING DIAGRAM 1
VCC
4.5V
2.2V
VDR
CS1
VSS
DATA RETENTION MODE
tCDR
tR
CS1>VCC-0.2V
DATA RETENTION TIMING DIAGRAM 2
VCC
4.5V
CS2
VDR
0.4V
VSS
DATA RETENTION MODE
tCDR
tR
CS2<0.2V
Rev.05 /Feb.99
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