HY57V161610D-I Datasheet, PDF (8/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D-I
AC CHARACTERISTICS (TA= - 40°C to 85°C, VDD=3.0V to 3.6V, VSS=0V^Note1,2))
Paramter
Symbo
l
RAS cycle
time
Operation
Auto
Refresh
tRC
tRRC
RAS to CAS delay
tRCD
RAS active time
tRAS
RAS precharge time
tRP
RAS to RAS bank active delay tRRD
CAS to CAS bank active delay tCCD
Write command to data-in delay tWTL
Data-in to precharge command tDPL
Data-in to active command
tDAL
DQM to data-in Hi-Z
tDQZ
DQM to data mask
tDQM
MRS to new command
tMRD
Precharge to data output Hi-Z
tPROZ
Power down exit time
tPDE
Self refresh exit time
tSRE
Refresh Time
tREF
-55I
Min
Max
55
55
16.5
38.5 100K
3
2
1
0
1
4
2
0
2
3
1
1
64
-6I
Min
Max
60
-
60
-
18
-
40
100K
3
-
2
-
1
-
0
-
1
-
4
-
2
-
0
-
2
-
3
-
1
-
1
-
64
-7I
Min
Max
70
-
70
-
20
-
45
100K
3
-
2
-
1
-
0
-
1
-
4
-
2
-
0
-
2
-
3
-
1
-
1
-
-
64
-10I
Min
Max
70
-
80
-
20
-
45
100K
2
-
2
-
1
-
0
-
1
-
3
-
2
-
0
-
2
-
3
-
1
-
1
-
-
64
Unit
ns
ns
ns
ns
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
Note
2
Note :
1. VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns.
2. A new command can be given tRRC after self refresh exit.
Rev. 0.3/Mar. 02
8