HY57V161610D-I Datasheet, PDF (7/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D-I
AC CHARACTERISTICS (TA= - 40°C to 85°C, VDD=3.0V to 3.6V, VSS=0V^Note1,2)
Parameter
-55I
-6I
-7I
-10I
Symbol
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
System clock
CL=3
tCK3
5.5
cycle time
CL=2
tCK2
-
6
-
7
-
10
-
ns
10
-
10
-
12
-
2
Clock high pulse width
tCHW
2
2
-
2.5
-
3
-
ns
3
Clock low pulse width
tCLW
2
2
-
2.5
-
3
-
ns
3
Access time
from clock
CL=3
CL=2
tAC3
tAC2
5
-
5.5
-
6
-
7
ns
-
6
-
6
-
7
2
Data-out hold time
tOH
2
2
-
2.5
-
2.5
-
ns
Data-Input setup time
tDS
1.5
1.5
-
1.75
-
2.5
-
ns
3
Data-Input hold time
tDH
1
1
-
1
-
1
-
ns
3
Address setup time
tAS
1.5
1.5
-
1.75
-
2.5
-
ns
3
Address hold time
tAH
1
1
-
1
-
1
-
ns
3
CKE setup time
tCKS
1.5
1.5
-
1.75
-
2.5
-
ns
3
CKE hold time
tCKH
1
1
-
1
-
1
-
ns
3
Command setup time
tCS
1.5
1.5
-
1.75
-
2.5
-
ns
3
Command hold time
tCH
1
1
-
1
-
1
-
ns
3
CLK to data output in low Z-
time
tOLZ
2
2
-
2
-
2
-
ns
CLK to data output in high Z-
time
tOHZ
2
5.5
2
6
2
7
3
10
ns
Note :
1.VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns.
2.tCK2 is 8.9ns only when tAC2 is 7.9ns in HY57V161610DTC-6I and HY57V161610DTC-7I.
3.Assume tR / tF (input rise and fall time ) is 1ns.
Rev. 0.3/Mar. 02
7