HYMD512G726B4-M Datasheet, PDF (7/16 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

HYMD512G726B(L)4M-M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Min.
Input Leakage
Current
Add, CMD, /CS,
/CKE
CK, /CK
Output Leakage Current
Output High Voltage
Output Low Voltage
-2
ILI
-4
ILO
-5
VOH
VTT + 0.76
VOL
-
Note :
1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 2.7V
3. These values are device characteristics.
Max
2
4
5
-
VTT - 0.76
Unit
Note
uA
1
uA
2
V
IOH = -15.2mA
V
IOL = +15.2mA
Rev. 0.1 / June 2004
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