HYMD512G726B4-M Datasheet, PDF (1/16 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

DESCRIPTION
128Mx72 bits
Low Profile Registered DDR SDRAM DIMM
HYMD512G726B(L)4M-M/K/H/L
Preliminary
Hynix HYMD512G726B(L)4M-M/K/H/L series is low profile registered 184-pin double data rate Synchronous DRAM
Dual In-Line Memory Modules (DIMMs) which are organized as 128M x 72 high-speed memory arrays.
HYMD512G726B(L)4M-M/K/H/L series consists of eighteen 128M x 4 DDR SDRAM in 400mil TSOP II packages on a
184pin glass-epoxy substrate. Hynix HYMD512G726B(L)4M-M/K/H/L series provide a high performance 8-byte inter-
face in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD512G726B(L)4M-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs
are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-
ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.
All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and
burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD512G726B(L)4M-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function
is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-
tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 1GB (128M x 72) Low Profile Registered DDR DIMM
based on 128M x 4 DDR SDRAM
• JEDEC Standard 184-pin dual in-line memory module
(DIMM)
• Error Check Correction (ECC) Capability
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• All inputs and outputs are compatible with SSTL_2
interface
• Fully differential clock operations (CK & /CK) with
100/133MHz
• Programmable CAS Latency 2 / 2.5 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• tRAS Lock-out function supported
• Internal four bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• 8192 refresh cycles / 64ms
ORDERING INFORMATION
Part No.
HYMD512G726B(L)4-M
HYMD512G726B(L)4-K
HYMD512G726B(L)4-H
HYMD512G726B(L)4-L
Power Supply
Clock Frequency
VDD=2.5V
VDDQ=2.5V
133MHz (*DDR266 2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
125MHz (*DDR200)
Interface
Form Factor
SSTL_2
184pin Registered DIMM
5.25 x 1.2 x 0.15 inch
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1 / June 2004
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