HY57V643220D Datasheet, PDF (7/13 Pages) Hynix Semiconductor – 4Banks x 512K x 32bits Synchronous DRAM

HY57V643220D(L/S)T(P) Series
4Banks x 512K x 32bits Synchronous DRAM
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ^. Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
-40 ~ 85
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ^. 10
Unit
o_C
o_C
V
V
V
mA
W
o_C . _Sec
DC OPERATING CONDITION (TA= -40 to 85^oC )
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
VDD, VDDQ
3.0
VIH
2.0
VIL
-0.3
Typ
Max
Unit
Note
3.3
3.6
V
1
3.3
VDDQ+0.3
V
1, 2
-
0.8
V
1, 3
Note : 1. All voltages are referenced to VSS = 0V
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration
AC OPERATING TEST CONDITION (TA= -40 to 85 ^oC, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
30
Unit
V
V
ns
V
pF
Note
CAPACITANCE (TA= -40 to 85 ^oC, f=1MHz, VDD=3.3V)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A10, BA0, BA1, CKE, CS, RAS, CAS, WE,
DQM 0~3
DQ0 ~ DQ31
Symbol
CI1
CI2
CI/O
Min Max Unit
2.5
3.5
pF
2.5
3.8
pF
4
6.5
pF
Rev. 0.3 / Sep. 2004
7