HY57V28820HCT-I Datasheet, PDF (6/11 Pages) Hynix Semiconductor – 4Banks x 4M x 8bits Synchronous DRAM

HY57V28820HC(L)T-I
DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3V, VSS=0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-6I -KI -HI -8I -PI -SI
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
120 110 110 110 100 100 mA 1
Precharge Standby Current ^{IDD2P CKE ≤ VIL(max), tCK = 15ns}
in Power Down Mode
IDD2PS CKE ≤ VIL(max), tCK = ∞
2
mA
1
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
IDD2N Input signals are changed one time during
15
Precharge Standby Current
in Non Power Down Mode
IDD2NS
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
mA
15
Active Standby Current
in Power Down Mode
IDD3P CKE ≤ VIL(max), tCK = 15ns
IDD3PS CKE ≤ VIL(max), tCK = ∞
5
mA
5
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
IDD3N Input signals are changed one time during
30
Active Standby Current
in Non Power Down Mode
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
mA
IDD3NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
20
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
CL=3
CL=2
140 120 120 120 110 110
mA 1
150 130 130 130 110 110
Auto Refresh Current
IDD5 tRRC ≥ tRRC(min), All banks active
240 220 220 200 200 200 mA 2
Self Refresh Current
IDD6 CKE ≤ 0.2V
2
mA 3
800
uA 4
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
2.Min. of tRRC (Refresh RAS cycle time) is applied to HY57V28820HC(L)T-6I/KI/HI/8I/PI/SI which are listed on AC characteristic II.
3.HY57V28820HCT-6I/KI/HI/8I/PI/SI
4.HY57V28820HCLT-6I/KI/HI/8I/PI/SI
5.
Rev. 0.1/Jan. 01
6