HY57V28820HCT-I Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 4Banks x 4M x 8bits Synchronous DRAM

CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Pin
Input Capacitance
CLK
A0 ~ A11, BA0, BA1, CKE,
CS, RAS, CAS, WE, DQM
Data Input / Output Capacitance DQ0 ~ DQ7
OUTPUT LOAD CIRCUIT
HY57V28820HC(L)T-I
-6I/KI/HI
-8I/PI/SI
Symbol
Unit
Min. Max. Min. Max.
CI1
2.5
3.5
2.5
4
pF
CI2
2.5
3.8
2.5
5
pF
CI/O
4
6.5
4
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA= -40 to 85°C, VDD=3.3±0.3V)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-1
-1
2.4
-
Note :
1.VIN = 0 to 3.6V, All other pins are not under test = 0V
2.DOUT is disabled, VOUT=0 to 3.6V
Max
1
1
-
0.4
Unit
uA
uA
V
V
Note
1
2
IOH = -2mA
IOL =+2mA
Rev. 0.1/Jan. 01
5