HY62V8100B Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 128K x8 bit 3.3V Low Power CMOS slow SRAM

HY62V8100B Series
AC CHARACTERISTICS
Vcc = 3.0V~3.6V, TA = 0°C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É(I), unless otherwise specified
# Symbol
Parameter
-70
-85
-10
Min. Max. Min. Max. Min Max. ^Unit
READ CYCLE
1 tRC Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
-
100 ns
3 tACS Chip Select Access Time
-
70
-
85
-
100 ns
4 tOE Output Enable to Output Valid
-
40
-
45
-
50 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
-
5
- ns
7 tCHZ Chip Deselection to Output in High Z
0
30
0
30
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
30
0
30
0
30 ns
9 tOH Output Hold from Address Change
10
-
10
-
15
- ns
WRITE CYCLE
10 tWC Write Cycle Time
70
-
85
-
100
-
ns
11 tCW Chip Selection to End of Write
60
-
70
-
80
- ns
12 tAW Address Valid to End of Write
60
-
70
-
80
- ns
13 tAS
Address Set-up Time
0
-
0
-
0
- ns
14 tWP Write Pulse Width
50
-
55
-
75
- ns
15 tWR Write Recovery Time
0
-
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
25
0
30
0
35 ns
17 tDW Data to Write Time Overlap
30
-
40
-
45
- ns
18 tDH Data Hold from Write Time
0
-
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
-
10
- ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : 1 Including jig and scope capacitance
Rev 13 / Apr. 2001
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