HY62V8100B Datasheet, PDF (4/12 Pages) Hynix Semiconductor – 128K x8 bit 3.3V Low Power CMOS slow SRAM

HY62V8100B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.2
-0.3(1)
Typ.
Max.
Unit
3.3
3.6
V
0
0
V
-
Vcc+0.3
V
-
0.6
V
Note :
1. VIL = -1.5V for pulse width less than 30ns and not 100% tested
DC ELECTRICAL CHARACTERISTICS
Vcc = 3.0V~3.6V, TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss <VOUT < Vcc,
-1
-
1
/CS1 = VIH or CS2 = VIL
or /OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS1 = VIL, CS2 = VIH,
-
5
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current
/CS1 = VIL, CS2 = VIH,
-
35
VIN = VIH or VIL
Cycle Time = Min, 100% duty,
IIO = 0mA
ISB
TTL Standby Current
/CS1 = VIH or CS2 = VIL ,
-
-
0.5
(TTL Input)
VIN = VIH or VIL
ISB1
Standby
HY62V8100B /CS1 > Vcc - 0.2V or CS2 < 0.2V, -
0.5 10
Current
HY62V8100B-E VIN > Vcc - 0.2V or
-
0.5 15
(CMOS Input) HY62V8100B-I VIN < Vss + 0.2V
-
0.5 15
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1mA
2.2
-
-
Unit
uA
uA
mA
mA
mA
uA
uA
uA
V
V
Note : Typical values are at Vcc = 3.3V, TA = 25°C
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Condition
VIN = 0V
VI/O = 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev 13 / Apr. 2001
3