HY57V281620HCT Datasheet, PDF (5/13 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

HY57V281620HC(L)T
CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Pin
Symbol
Input capacitance
CLK
C I1
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS ,
CI 2
WE, UDQM, LDQM
Data input / output capacitance DQ0 ~ DQ15
C I/O
-6/K/H
Min
Max
2.5
3.5
2.5
3.8
4.0
6.5
OUTPUT LOAD CIRCUIT
-8/P/S
Min
Max
2.5
4.0
2.5
5.0
Unit
pF
pF
4.0
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-1
-1
2.4
-
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under V IN =0V
2.DOUT is disabled, VOUT=0 to 3.6
Max
1
1
-
0.4
Unit
uA
uA
V
V
Note
1
2
IOH = -2mA
IOL = +2mA
Rev. 0.2/Aug. 01
6