HY57V281620HCT Datasheet, PDF (4/13 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS
HY57V281620HC(L)T
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IO S
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (TA=0 to 70°C)
Unit
°C
°C
V
V
mA
W
°C ⋅ Sec
Parameter
Symbol
Min
Typ
Power Supply Voltage
Input High voltage
Input Low voltage
VDD, VDDQ
VIH
VIL
3.0
3.3
2.0
3.0
-0.3
0
Note :
1.All voltages are referenced to VSS = 0V
2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
Max
3.6
VDDQ + 0.3
0.8
Unit
V
V
V
Note
1
1,2
1,3
AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
Note
1
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Rev. 0.2/Aug. 01
5