HY5756820C Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 4 Banks x 8M x 8Bit Synchronous DRAM

HY57V56820C(L)T
CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Pin
Symbol
Input capacitance
CLK
CI1
A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS,
CI2
WE, UDQM, LDQM
Data input / output capacitance DQ0 ~ DQ15
CI/O
-6/K/H
Min
Max
2.5
3.5
2.5
3.8
4.0
6.5
OUTPUT LOAD CIRCUIT
-8/P/S
Unit
Min
Max
2.5
4.0
pF
2.5
5.0
pF
4.0
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Parameter
Symbol
Min.
Max
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
-1
1
-1
1
2.4
-
-
0.4
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6V
Unit
uA
uA
V
V
Note
1
2
IOH = -4mA
IOL = +4mA
Rev. 0.4 / July 2003
5