HY27UH08AG5B Datasheet, PDF (47/51 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

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HY27UH08AG5B Series
16Gbit (2Gx8bit) NAND Flash
Bad Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
Unlike the case of odd page which carries a possibility of affecting previous page, the failure of a page program oper-
ation does not affect the data in other pages in the same block, the block can be replaced by re-programming the cur-
rent data and copying the rest of the replaced block to an available valid block.
Refer to Table 21 and Figure 30 for the recommended procedure to follow if an error occurs during an operation.
Operation
Erase
Program
Read
Recommended Procedure
Block Replacement
Block Replacement
ECC (with 1bit/528byte)
Table 21: Block Failure
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Figure 30: Bad Block Replacement
NOTE :
1. An error occurs on n^th page of the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. N^th data of block A which is in controller buffer memory is copied into n^th page of Block B
4. Bad block table should be updated to prevent from eraseing or programming Block A
Rev 0.2 / Jan. 2008
47