HY64SD16162B Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
Vddq
VSS
VIH
VIL
Parameter
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
1.8
1.7
0
2.2
-0.3¹
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
HY64SD16162B Series
Typ.
-
-
-
-
-
Max. Unit
2.2
V
Vdd
V
0
V
Vdd+0.3 V
0.6
V
DC ELECTRICAL CHARACTERISTICS
Vdd=1.8V~2.2V, Vddq=1.7V~Vdd, TA= -25°C to 85°C(E) / -40°C to 85°C(I)
Sym.
Parameter
Test Condition
ILI Input Leakage Current
VSS≤VIN≤Vdd
VSS≤VOUT≤Vddq,
ILO Output Leakage Current
/CS1=VIH, CS2=VIH,
/OE=VIH or /WE=VIL
/CS1=VIL, CS2=VIH,
ICC Operating Power Supply Current _{VIN=VIH or VIL, II/O=0mA}
Min.
-1
-1
Max. Unit
1 µA
1 µA
-
3 mA
ICC1
Average Operating Current
ICC2
ISB TTL Standby Current
ISB1 Standby Current(CMOS Input)
IDPD
VOH1
VOH2
VOL1
VOL2
Deep Power Down
Output High Voltage
Output High Voltage
Output Low Voltage
Output Low Voltage
/CS1≤ 0.2V, CS2 ≥Vdd-0.2V,
VIN ≤0.2V or VIN≥Vdd-0.2V,
Cycle Time=1µs.
100% Duty, II/O=0mA
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, Cycle Time=Min.
100% Duty, II/O=0mA
/CS1,CS2=VIH or /UB,/LB= VIH
-
5 mA
-
20 mA
-
0.5 mA
/CS1,CS2≥Vdd-0.2V,
/UB,/LB ≤0.2V or /UB,/LB ≥Vdd-0.2V,
otherwise CS2,/UB,/LB≥Vdd-0.2V,
-
/CS1≤0.2V or /CS1≥Vdd-0.2V
75 µA
CS2≤VSS+0.2V
IOH=-0.1mA
IOH=-0.4mA
IOL=0.1mA
IOL=0.4mA
-
2 µA
Vddq-0.2 Vddq+0.3 V
Vddq*0.8 Vddq+0.3 V
-
0.2 V
-
0.4 V
CAPACITANCE
(Temp = 25°C, f=1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(ADD, /CS1, CS2, /WE, /OE, /UB, /LB)
COUT Output Capacitance(I/O)
Note : These parameters are sampled and not 100% tested
Revision 1.0 / December. 2002
Condition
VIN=0V
VI/O=0V
Max. Unit
8 pF
10 pF
4