HY64SD16162B Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64SD16162B Series
ORDERING INFORMATION
Part Number
HY64SD16162B-E
HY64SD16162B-I
Speed
85
85
Note
1. E : Extended Temp. (-25°C ~ 85°C)
2. I : Industrial Temp. (-40°C ~ 85°C)
Power
LL-Part
LL-Part
Temperature
E¹
I²
Package
FBGA
FBGA
ABSOLUTE MAXIMUM RATINGS ¹
Symbol
VIN
VOUT
Vdd
Vddq
TA
TSTG
PD
TSOLDER
Parameter
Input Voltage
Output Voltage
Core Power Supply
I/O Power Supply
Ambient Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to Vdd+0.3
-0.3 to Vddq+0.3
-0.3 to 3.6
-0.3 to 3.6
-25 to 85
-40 to 85
-55 to 150
1.0
260•10
Unit
V
V
V
V
°C
°C
°C
W
°C•sec
Remark
HY64SD16162B-E
HY64SD16162B-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied. Exposure
to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE /LB /UB
Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
HHXXXX
Deselected
High-Z
High-Z
X
LXXXX
Deselected
High-Z
High-Z
X H X X H H Deselected
High-Z
High-Z
LHLXLH
Write
DIN
High-Z
LHHL LH
Read
DOUT
High-Z
L H H H L H Output Disabled High-Z
High-Z
L H L XH L
Write
High-Z
DIN
L HH L H L
Read
High-Z
DOUT
L H H H H L Output Disabled High-Z
High-Z
LHLXL L
Write
DIN
DIN
LHHL L L
Read
DOUT
DOUT
L H H H L L Output Disabled High-Z
High-Z
Note
1. H=VIH, L=VIL, X=don’t care(VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
Power
Standby
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Revision 1.0 / December. 2002
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