HY62UF16201A Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

HY62UF16201A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
2.7
Vss
Ground
0
VIH
Input High Voltage
2.2
VIL
Input Low Voltage
-0.3(1)
Note :
1. VIL = -1.5V for pulse width less than 30ns
Typ.
3.0
0
-
-
Max. Unit
3.3
V
0
V
Vcc+0.3 V
0.6
V
DC ELECTRICAL CHARACTERISTICS
TA = 0°C to 70°C/ -40°C to 85°C (I)
Symbol
Parameter
Test Condition
ILI
Input Leakage Current Vss < VIN < Vcc
ILO
Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL,
/UB = /LB = VIH
Icc
Operating Power Supply /CS = VIL, VIN = VIH or VIL,
Current
II/O = 0mA
ICC1
Average Operating
Cycle Time=Min.100% duty,
Current
/CS = VIL,VIN = VIH or VIL, II/O = 0mA
Cycle time = 1us,
/CS < 0.2V, VIN<0.2V, II/O = 0mA
ISB
Standby Current
/CS = VIH or
(TTL Input)
/UB & /LB = VIH, VIN = VIH or VIL
ISB1
Standby Current
/CS > Vcc - 0.2V or
SL
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
VIN > Vcc - 0.2V or
LL
VIN < Vss + 0.2V
VOL
Output Low Voltage
IOL = 2.1mA
VOH
Output High Voltage
IOH = -1.0mA
Notes :
1. Typical values are at Vcc = 3.0V, TA = 25°C
2. Typical values are sampled and not 100% tested
Min. Typ. Max. Unit
-1
-
1
uA
-1
-
1
uA
-
-
3 mA
-
-
45 mA
5 mA
-
-
0.3 mA
-
-
2
uA
-
0.5 10 uA
-
-
0.4 V
2.4
-
-
V
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
Condition Max. Unit
CIN
Input Capacitance(Add, /CS, /WE, /OE) VIN = 0V
8
pF
COUT
Output Capacitance(I/O)
VI/O = 0V
10
pF
Note :
1. These parameters are sampled and not 100% tested
Rev.08 / Mar. 2002
3