HY62UF16201A Datasheet, PDF (2/11 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

HY62UF16201A Series
DESCRIPTION
The HY62UF16201A is a high speed, super low
power and 2Mbit full CMOS SRAM organized as
131,072 words by 16bits. The HY62UF16201A
uses high performance full CMOS process
technology and is designed for high speed and
low power circuit technology. It is particularly well-
suited for the high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup(LL/SL-part)
-. 1.2V(min) data retention
• Standard pin configuration
-. 48-FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62UF16201A
2.7~3.3 55/70/85/100
HY62UF16201A-I 2.7~3.3 55/70/85/100
Notes :
1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
10
2
10
2
PIN CONNECTION
BLOCK DIAGRAM
/LB /OE A0 A1 A2 NC
IO9 /UB A3 A4 /CS IO1
IO10 IO11 A5 A6 IO2 IO3
Vss IO12 NC A7 IO4 Vcc
Vcc IO13 NC A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
NC A8 A9 A10 A11 NC
48-FBGA(Top View)
A0
ROW
DECODER
MEMORY ARRAY
128K x 16
A16
/CS
/OE
/LB
/UB
/WE
Temperature
(°C)
0~70
-40~85(I)
I/O1
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.7V~3.3V)
Ground
No Connection
Rev.08 / Mar. 2002
2