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HY62UF16201A Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM
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HY62UF16201A Series
ORDERING INFORMATION
Part No.
HY62UF16201ALLF
HY62UF16201ALLF-I
HY62UF16201ASLF
HY62UF16201ASLF-I
HY62UF16201ALLF1
HY62UF16201ALLF1-I
HY62UF16201ASLF1
HY62UF16201ASLF1-I
Speed
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
Power
LL-part
LL-part
SL-part
SL-part
LL-part
LL-part
SL-part
SL-part
Temp.
I
I
I
I
Package
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(7mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
FBGA(6mm X 8mm)
Note :
1. Blank : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.2 to 3.6
V
Vcc
Power Supply
-0.2 to 4.6
V
TA
Operating Temperature
0 to 70
°C
HY62UF16201A
-40 to 85
°C
HY62UF16201A-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260 • 10
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE /OE /LB /UB
Mode
I/O
I/O1~I/O8 I/O9~I/O16
H
X
X X X Deselected
High-Z
High-Z
X
X
X H H Deselected
High-Z
High-Z
L
H
H L X Output Disabled High-Z
High-Z
L
H
H X L Output Disabled High-Z
High-Z
L
H
L
L H Read
DOUT
High-Z
HL
High-Z
DOUT
LL
DOUT
DOUT
L
L
X L H Write
DIN
High-Z
HL
High-Z
DIN
LL
DIN
DIN
Note :
1. H=VIH, L=VIL, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Power
Standby
Standby
Active
Active
Active
Active
Rev.08 / Mar. 2002
2
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