HY5S7B6ALFP-6 Datasheet, PDF (31/52 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6ALF(P) Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
CLK
Command
READ
BURST
WRITE
Address
DQ
DQ
BA, Col
n
CL =2
Don
CL =3
Don'
Don
Don'
BA, Col
b
DIb0 DIb1
DIb0 DIb1
1) DO n = Data Out from column n; DI b = Data In to column b
DIb2
DIb2
DIb3
DIb3
Don't Care
Read to Write
Notes :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank
as the preceding read command, the write command can be performed after an interval of no less than 1 clock.
However, DQM must be set High so that the output buffer becomes High-Z before data input.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1
cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the output
buffer becomes High-Z before data input.
Rev 1.1 / July. 2007
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