HY5S7B6ALFP-6 Datasheet, PDF (10/52 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6ALF(P) Series
DC CHARACTERISTICS III - Low Power (IDD6)
Temp.
( ^oC)
45
85
4 Banks
250
500
Memory Array
2 Banks
220
400
1 Bank
205
350
Unit
uA
uA
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45^oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will
automatically adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.1 / July. 2007
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