HY5S7B6ALFP-6 Datasheet, PDF (28/52 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6ALF(P) Series
READ to READ
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated.
When another read command is executed at the same ROW address of the same bank as the preceding read com-
mand execution, the second read can be performed after an interval of no less than 1 clock. Even when the first com-
mand is a burst read that is not yet finished, the data read by the second command will be valid.
CLK
Command
Address
DQ
DQ
READ
NOP
BA, Col
a
CL =2
CL =3
READs
BA, Col
b
Doa0
Doa1
Doa0
Consecutive Read Bursts
NOP
Dob0
Dob1
Doa1
Dob0
Don't Care
Rev 1.1 / July. 2007
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