HY29F400 Datasheet, PDF (31/40 Pages) Hynix Semiconductor – 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

AC CHARACTERISTICS
Enter Automatic
Erase
WE#
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
HY29F400
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
Speed Option
Unit
- 45 - 55 - 70 - 90
t_ST Voltage Setup Time
t_RSP
RESET# Setup Time for
Temporary Sector Unprotect
Min
4
µs
Min
4
µs
t_CE Chip Enable to Output Delay
Max 45 55 70 90 ns
t_OE Output Enable to Output Delay
Max 25 25 30 35 ns
t_VIDR V_ID Transition Time for Temporary Sector Unprotect ¹ Min
500
ns
t_VLHT V_ID Transition Time for Sector Protect and Unprotect ¹ Min
500
ns
t_WPP1 Write Pulse Width for Sector Protect
Min
100
µs
t_WPP2 Write Pulse Width for Sector Unprotect
Min
100
ms
t_OESP OE# Setup Time to WE# Active ¹
Min
4
µs
t_CSP CE# Setup Time to WE# Active ¹
Min
4
µs
Notes:
1. Not 100% tested.
V _ID
RESET#
0 or 5V
t_VIDR
CE#
t_VIDR
0 or 5V
WE#
t_RSP
RY/BY#
Figure 22. Temporary Sector Unprotect Timings
Rev. 5.2/May 01
31