HY29F400 Datasheet, PDF (29/40 Pages) Hynix Semiconductor – 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

AC CHARACTERISTICS
HY29F400
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Addresses
CE#
OE#
WE#
Data
RY/BY#
t_WC
t_AS
0x2AA
t_GHWL
t_CH
t_WP
t_CS
t_DS
0x55
t_WPH
t_DH
t_AH
SA
Address = 0x555
for chip erase
0x30
Data = 0x10
for chip erase
t_BUSY
VA
t_WHWH2 or
t_WHWH3
Status
VA
D_OUT
t_RB
V_CC
t_VCS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D is the true data at the read address.(0xFF after an erase operation).
OUT
2. Commands shown are for Word mode operation.
3. V_CC shown only to illustrate t_VCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 18. Sector/Chip Erase Operation Timings
Rev. 5.2/May 01
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