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HY62LF16404D Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 256Kx16bit full CMOS SRAM
HY62LF16404D Series
ORDERING INFORMATION
Part No.
HY62LF16404D-DF(I)
HY62LF16404D-SF(I)
Speed
70/85
70/85
Note 1. Blank : Commercial, I : Industrial
Power
LL-part
SL-part
Temp.
I
I
Package
FBGA
FBGA
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VIN, VOUT
Vcc
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to 3.0
-0.3 to 4.0
40 to 85
-55 to 150
1.0
260 • 10
Unit
V
V
°C
°C
W
°C•sec
Remark
HY62LF16404D-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE /OE /LB /UB
Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
H
X
X
X
X XX
X HH
Deselected
High-Z
High-Z
L
H
H
L
X
X
L
Output Disabled
High-Z
High-Z
LH
DOUT
High-Z
L
H
L HL
Read
High-Z
DOUT
LL
DOUT
DOUT
LH
DIN
High-Z
L
L
X HL
Write
High-Z
DIN
LL
DIN
DIN
Note:
1. H=VIH, L=VIL, X=don't care (VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Power
Standby
Active
Active
Active
Rev.03 / Aug.01
2