HY62LF16404D Datasheet, PDF (2/10 Pages) Hynix Semiconductor – 256Kx16bit full CMOS SRAM

HY62LF16404D Series
DESCRIPTION
The HY62LF16404D is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62LF16404D uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.5V.
FEATURES
Preliminary
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.5V(min) data retention
• Standard pin configuration
-. 48-ball FBGA
Product No.
Voltage
(V)
Speed (ns)
HY62LF16404D-I 2.3~2.7
70/85
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
Standby
Current(uA)
LL
SL
10
5
Temperature
(°C)
-40~85
PIN CONNECTION
1 2 34 5 6
A
/LB /OE A0 A1 A2 NC
A0
B
IO9 /UB A3 A4 /CS IO1
C
IO10 IO11 A5 A6 IO2 IO3
D
Vss IO12 A17 A7 IO4 Vcc
E
Vcc IO13 NC A16 IO5 Vss
F
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
A17
G
H
NC A8 A9 A10 A11 NC
/CS
/OE
FBGA
/LB
/UB
/WE
BLOCK DIAGRAM
ROW
DECODER
MEMORY ARRAY
256K x 16
I/O1
I/O8
I/O9
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control (I/O1~I/O8)
Upper Byte Control (I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A17
Vcc
Vss
NC
Pin Function
Data Inputs/Outputs
Address Inputs
Power (2.3~2.7)
Ground
No Connection
Rev.03 / Aug.01
2