HY27UF082G2A Datasheet, PDF (3/45 Pages) Hynix Semiconductor – 2Gbit (256Mx8bit/128Mx16bit) NAND Flash

HY27UF(08/16)2G2A Series
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- VCC = 2.7 to 3.6V : HY27UFxx2G2A
Memory Cell Array
= (2K+64) Bytes x 64 Pages x 2,048 Blocks
= (1K+32) Words x 64pages x 1,024 Blocks
PAGE SIZE
- x8 device : (2K+64 spare) Bytes
: HY27UF082G2A
- x16 device : (1K+32 spare) Words
: HY27UF162G2A
BLOCK SIZE
- x8 device: (128K + 4K spare) Bytes
- x16 device : (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (max.)
- Sequential access: 30ns (min.)
- Page program time: 200us (typ.)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- 1st cycle: Manufacturer Code
- 2nd cycle: Device Code
- 3rd cycle: Internal chip number, Cell Type, Number of
Simultaneously Programmed Pages.
- 4th cycle: Page size, Block size, Organization, Spare
size
- 5th cycle: Plane Number, Plane Size
CHIP ENABLE DON’T CARE
- Simple interface sith microcontroller
SERIAL NUMBER OPTION
DATA RETENTION
- 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- 10 years Data Retention
PACKAGE
- HY27UF(08/16)2G2A-T(P)
: 48-pin TSOP1(12 x 20 x 1.2 mm)
- HY27UF(08/16)2G2A-T (Lead)
- HY27UF(08/16)2G2A-TP (Lead Free)
- HY27UF082G2A-UP
: 52-ULGA (12 x 17 x 0.65 mm)
- HY27UF082G2A-UP (Lead Free)
CACHE PROGRAM
- Internal (2048+64) Byte buffer to improve the program
throughput
Rev 0.4 / Mar. 2007
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