HY27UF082G2A Datasheet, PDF (20/45 Pages) Hynix Semiconductor – 2Gbit (256Mx8bit/128Mx16bit) NAND Flash

HY27UF(08/16)2G2A Series
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
Parameter
Operating
Current
Sequential
Read
Program
Erase
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Leve
Output Low Current (R/B)
Symbol
Test Conditions
3.3Volt
Min
Typ
Max
tRC=30ns
ICC1
CE=VIL,
-
15
30
IOUT=0mA
ICC2
-
-
15
30
ICC3
-
-
15
30
ICC4
CE=VIH,
WP=0V/Vcc
-
1
ICC5
CE=Vcc-0.2,
WP=0V/Vcc
-
10
50
ILI
VIN=0 to Vcc (max)
-
-
± 10
ILO
VOUT =0 to Vcc (max)
-
-
± 10
VIH
-
Vccx0.8
-
Vcc+0.3
VIL
-
-0.3
-
0.2xVcc
VOH
IOH=-400uA
2.4
-
-
VOL
IOL=2.1mA
-
-
0.4
IOL
(R/B)
VOL=0.4V
8
10
-
Table 9: DC and Operating Characteristics
Unit
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
mA
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.6V)
Table 10: AC Conditions
Value
3.3Volt
0V to Vcc
5ns
Vcc / 2
1 TTL GATE and CL=50pF
Rev 0.4 / Mar. 2007
20