HY5S5B2CLFP-6E Datasheet, PDF (28/54 Pages) Hynix Semiconductor – 256M (8Mx32bit) Mobile SDRAM

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256Mbit (8Mx32bit) Mobile SDR Memory
HY5S5B2CLF(P) Series
READ / WRITE COMMAND
Before executing a read or write operation, the corresponding bank and the row address must be activated by the
bank active (ACT) command. An interval of tRCD is required between the bank active command input and the follow-
ing read/write command input.
The READ command is used to initiate a Burst Read to an active row. The value of BA0 and BA1 selects the bank and
address inputs select the starting column location.
The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being
accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open
for subsequent access. The valid data-out elements will be available CAS latency after the READ command is issued.
The WRITE command is used to initiate a Burst Write access to an active row. The value of BA0, BA1 selects the bank
and address inputs select the starting column location.
The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being
accessed will be precharged at the end of the write burst; if auto precharge is not selected, the row will remain open
for subsequent access.
CLK
CKE
CS
RAS
CAS
WE
A0 ~ A8
A10
B A 0 ,1
H igh
CLK
CKE
CA
BA
Read Command
O peration
CS
RAS
CAS
WE
A0 ~ A8
H igh to Enable
Auto Precharge _A10
Low to Disable
Auto Precharge
B A 0 ,1
Don't Care
H ig h
CA
BA
W rite Com m and
O peration
READ / WRITE COMMAND
Rev 1.5 / Aug. 2008
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