HY5DU28422BT Datasheet, PDF (22/33 Pages) Hynix Semiconductor – 128M-S DDR SDRAM

HY5DU28422B(L)T
HY5DU28822B(L)T
ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Output Short Circuit Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Unit
o_C
o_C
V
V
V
mA
W
o_{C ⋅ sec}
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Symbol
VDD
VDDQ
VIH
VIL
VTT
VREF
Min
2.3
2.3
VREF + 0.15
-0.3
VREF - 0.04
0.49*VDDQ
Typ.
2.5
2.5
-
-
VREF
0.5*VDDQ
Max
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
Unit
V
V
V
V
V
V
Note
1
2
3
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed +/- 2% of the dc value.
DC CHARACTERISTICS I (TA=0 to 70°C, Voltage referenced to VSS = 0V)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-2
-5
VTT + 0.76
-
Max
2
5
-
VTT - 0.76
Unit
uA
uA
V
V
Note
1
2
IOH = -15.2mA
IOL = +15.2mA
Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V
Rev. 0.3/May. 02
22