HY5S6B6D Datasheet, PDF (20/27 Pages) Hynix Semiconductor – 4Banks x1M x 16bits Synchronous DRAM

HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CAPACITANCE (TA= 25 ^oC, f=1MHz)
Parameter
Pin
Input capacitance
Data input/output capacitance
CLK
A0~A11, BA0, BA1, CKE, CS,
RAS, CAS, WE, UDQM, LDQM
DQ0 ~ DQ15
Symbol
CI1
-H
Min Max
2 4.0
-/P/S/B
Unit
Min Max
2 4.0 pF
CI2
2 4.0 2 4.0 pF
CI/O
3.5 6.0 3.5 6.0 pF
DC CHARACTERRISTICS I (TA= 25 to 85^oC)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min
-1
-1.5
VDDQ-0.2
-
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Max
1
1.5
-
0.2
Unit
uA
uA
V
V
Note
1
2
3
4
Rev 0.3 / July 2004
20