HY5PS1G431CFP Datasheet, PDF (19/37 Pages) Hynix Semiconductor – 1Gb DDR2 SDRAM

HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
For purposes of IDD testing, the following parameters are to be utilized
Parameter
CL(IDD)
tRCD(IDD)
tRC(IDD)
tRRD(IDD)-x4/x8
tRRD(IDD)-x16
tCK(IDD)
tRASmin(IDD)
tRASmax(IDD)
tRP(IDD)
tRFC(IDD)-256Mb
tRFC(IDD)-512Mb
tRFC(IDD)-1Gb
tRFC(IDD)-2Gb
DDR2-800
5-5-5
5
12.5
57.5
7.5
10
2.5
45
70000
12.5
75
105
127.5
197.5
6-6-6
6
15
60
7.5
10
2.5
45
70000
15
75
105
127.5
197.5
DDR2-
667
5-5-5
5
15
60
7.5
10
3
45
70000
15
75
105
127.5
197.5
DDR2-
533
4-4-4
4
15
60
7.5
10
3.75
45
70000
15
75
105
127.5
197.5
DDR2-
400
3-3-3
3
15
55
7.5
10
5
40
70000
15
75
105
127.5
197.5
Units
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Detailed IDD7
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the
specification.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum ^tRC(IDD) without violating ^tRRD(IDD) using a burst length of 4. Control and
address bus inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D
-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D
-DDR2-533 5/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
Timing Patterns for 8 bank devices x4/8
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7
-DDR2-533 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
Timing Patterns for 8 bank devices x16
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-533 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 D A6 RA6 D A7 RA7 D D D
Rev. 0.2 /Dec 2006
19