HY5PS1G431CFP Datasheet, PDF (11/37 Pages) Hynix Semiconductor – 1Gb DDR2 SDRAM

HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Symbol
VDD
VDDL
VDDQ
VREF
VTT
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
1
1,2
1,2
3,4
5
Note:
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track varia-
tions in VDDQ
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
3.1.2 ODT DC electrical characteristics
PARAMETER/CONDITION
SYMBOL
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to VDDQ/2
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta VM
MIN NOM MAX
60 75 90
120 150 180
40 50 60
-6
+6
UNITS NOTES
ohm
1
ohm
1
ohm
1
%
1
Note :
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V_IH (ac) and V_IL (ac) to test pin separately, then measure current I(V_IH (ac))
and I(V_IL(ac)) respectively. V_IH (ac), V_IL (ac), and VDDQ values defined in SSTL_18
Rtt(eff) =
V_IH (ac) - V_IL (ac)
I(V_IH (ac)) - I(V_IL (ac))
Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load.
2 x Vm
delta VM =
- 1 x 100%
VDDQ
Rev. 0.2 /Dec 2006
11