English
Language : 

HYMD532646B6-H Datasheet, PDF (16/30 Pages) Hynix Semiconductor – 1184pin Unbufferd DDR SDRAM DIMMs
◁
CAPACITANCE (TA=25oC, f=100MHz)
256MB: HYMD532646B[P]6[J]
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE
/CS
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
1184pin Unbufferd DDR SDRAM DIMMs
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIO1
Min
Max
Unit
40
52
pF
40
52
pF
40
52
pF
40
52
pF
22
32
pF
7
12
pF
7
12
pF
512MB: HYMD564646B[P]8[J]
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE
/CS
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIO1
Min
Max
Unit
58
71
pF
58
71
pF
58
72
pF
58
72
pF
25
40
pF
7
12
pF
7
12
pF
512MB (with ECC): HYMD564726B[P]8[J]
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE
/CS
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
CB0 ~ CB7
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIO1
CIO2
Min
Max
Unit
60
75
pF
60
75
pF
60
75
pF
60
75
pF
27
45
pF
7
12
pF
7
12
pF
7
12
pF
Rev. 1.1 / May. 2005
16
 ▷