AT-33225 Datasheet, PDF (8/10 Pages) Agilent(Hewlett-Packard) – 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones

Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS)
V_BB
V_CC
38.1 (1.5)
V_BB
T1
C2
R2
R1 ^R3
L1
R4
C4
C1
INPUT
C3
PA3 DEMO
C6
L2
R5
C5
V_CC
C8 C9
9/96
C7
B–MFG0141
C10
OUTPUT
C1
100.0 pF
C2
100.0 nF
C3
9.5 pF
C4
100.0 pF
C5
100.0 pF
C6
100.0 nF
C7
6.8 pF
C8
1.5 µF
C9
10.0 µF
C10 100.0 pF
R1
2.2 Ω
R2
750.0 Ω
R3
2.2 Ω
R4
10.0 Ω
R5
10.0 Ω
T1 MBT 2222A
L1
18.0 µH
L2
18.0 µH
76.2 (3.0)
CW Test
V_CE = 4.8 V
I_CQ = 6.0 mA
Freq. = 836.5 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS)
2.2 Ω
V_BB
750 Ω
CW Test
V_CC
V_CE = 4.8 V
I_CQ = 6.0 mA
Freq. = 836.5 MHz
B ^DC
C E ^Transistor
2.2 Ω
10 Ω
100 nF
10 Ω
100 pF
18 µH
80 Ω
λ/4 @ 836.5 MHz
100 pF
80 Ω
100 nF
18 µH
λ/4 @ 836.5 MHz
1.5 µF
10 µF
RF IN
100 pF
9.5 pF
50 Ω
= 7.19 (.283)
50 Ω
= 12.65 (.498)
100 pF
6.8 pF
RF OUT
4-78