AT-33225 Datasheet, PDF (1/10 Pages) Agilent(Hewlett-Packard) – 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones

4.8 V NPN Common Emitter
Output Power Transistor
for␣ AMPS, ET ACS Phones
Technical Data
AT-33225
Features
• 4.8 Volt Operation
• +31.0 dBm P_out @ 900 MHz,
Typ.
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -29 dBc IMD₃ @ P_out of
24␣ dBm per tone, 900 MHz,
Typ.
• Internal Input Pre-Matching
Facilitates Cascading
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
COLLECTOR
4
Applications
• Output Power Device for
AMPS and ETACS Handsets
• 900 MHz ISM
EMITTER 1 2 3 EMITTER
BASE
Description
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW␣ output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz F_t Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-71
5965-5910E