AT-33225 Datasheet, PDF (7/10 Pages) Agilent(Hewlett-Packard) – 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones

Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM)
V_BB
V_CC
38.1 (1.5)
V_BB
T1
C3
R2
L1
R1 ^R3 R4
C2
C1
INPUT
C4
PA3 DEMO
C5
L2
R5
C6
V_CC
C8 C9
9/96
C7
B–MFG0141
C10
OUTPUT
C1
100.0 pF
C2
100.0 pF
C3
100.0 nF
C4
7.5 pF
C5
100.0 nF
C6
100.0 pF
C7
5.1 pF
C8
1.5 µF
C9
10.0 µF
C10 100.0 pF
R1
2.2 Ω
R2
750.0 Ω
R3
2.2 Ω
R4
10.0 Ω
R5
10.0 Ω
T1 MBT 2222A
L1
18.0 µH
L2
18.0 µH
76.2 (3.0)
CW Test
V_CE = 4.8 V
I_CQ = 6.0 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM)
2.2 Ω
V_BB
750 Ω
CW Test
V_CC
V_CE = 4.8 V
I_CQ = 6.0 mA
Freq. = 900 MHz
B ^DC
C E ^Transistor
2.2 Ω
10 Ω
100 nF
10 Ω
100 pF
18 µH
80 Ω
λ/4 @ 900 MHz
100 pF
80 Ω
100 nF
18 µH
λ/4 @ 900 MHz
1.5 µF
10 µF
RF IN
100 pF
7.5 pF
50 Ω
= 7.06 (.278)
50 Ω
= 14.35 (.565)
100 pF
5.1 pF
RF OUT
4-77