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| AT-33225 Datasheet, PDF (2/10 Pages) Agilent(Hewlett-Packard) – 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones | |||
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AT-33225 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum[1]
1.4
16.0
9.5
640
1.6
150
-65 to 150
Thermal Resistance[3]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 25 mW/°C for TC > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE= 4.5V,Ic = 100mA,Tj =150°C,
1- 2⣠µm âhot-spotâ resolution.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified
Pout Output Power[1]
ηC
Collector Efficiency[1]
Pin = +22 dBm dBm +30.0 +31.0
Pin = +22 dBm % 60 70
IMD3 3rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dBc
Pout each Tone = +24 dBm [1]
F2 = 901 MHz
Mismatch Tolerance, No Damage[1]
Pout = +31 dBm
any phase, 2 sec duration
-29
7:1
BVEBO Emitter-Base Breakdown Voltage
IE = 0.4 mA, open collector V 1.4
BVCBO Collector-Base Breakdown Voltage
IC = 2.0 mA, open emitter V 16.0
BVCEO Collector-Emitter Breakdown Voltage
IC = 10.0 mA, open base V
9.5
hFE Forward Current Transfer Ratio
VCE = 3 V, IC = 180 mA â 80 150 330
ICEO Collector Leakage Current
VCEO = 5 V µA
30
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
4-72
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