AT-33225 Datasheet, PDF (5/10 Pages) Agilent(Hewlett-Packard) – 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones

AT-33225 Typical Large Signal Impedances
V_CE = 4.8 V, I_CQ = 6 mA, P_out = +31.0 dBm
Freq.
MHz
750
800
850
900
950
Γ source
Mag.
Ang.
0.77
-162
0.80
-169
0.82
-164
0.82
-163
0.83
-166
Γ load
Mag.
Ang.
0.64
-174
0.67
-173
0.64
-175
0.67
-174
0.74
-175
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
0
2
4
6
8
10
Vcb (V)
Figure 11. Collector-Base
Capacitance vs. Collector-Base
Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad
C
CPad
B
CPad
Die Area = 1.2
CPad = 0.3 pF
E1
E2
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
0.01
1.27
0.107
Packaged Model
Cbc
RB RB
Die
LB2 LB3
CM
LE2 LE2
LB1 R1
B
Cbe
RB RB
Die
LB2 LB3
CM
LE2 LE2
LC1
C
Cce
Label Value
Cbc 0.80 pF
Cbe 0.006 pF
Cce 3.17 pF
CM 20.8 pF
LB1 0.63 nH
LB2 0.10 nH
LB3 0.87 nH
LE1 0.35 nH
LE2 0.78 nH
LC1 0.74 nH
RB 0.1 Ω
R1 0.2 Ω
R1
LE1
E
4-75