HMMC-5620 Datasheet, PDF (4/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz High-Gain Amplifier

V_DD
RF
Input
RF
Output
Chip ID No.
875 (V_DD Pad)
910 (Center of V_DD Pad)
1010
(±10)
350
0
85
0 _{(RF Input Pad)}
1325
(RF Output Pad)
1410
(±10)
Figure 2. HMMC-5620 Bonding Pad Locations.
350
Notes:
All dimensions in microns.
RF Pad Dim: 80 x 80 µm.
V_DD Pad Dim: 110 x 90 µm
All other dimensions: ±5 µm
(unless otherwise noted).
Chip thickness: 127 ± 15 µm.
68 pF Chip Capacitor
L ≥2 nH
(1.0 mil Gold Wire Bond
with length ≥100 mils)
Gold Plated Shim
Input and Output Thin Film
Circuits with 50 ohm transmission
lines. (2 places)
V_DD
RF IN RF OUT
2.0 mil
nom. gap
Figure 3. HMMC-5620 Assembly Diagram. (For 6.0 – 20.0 GHz Operation)
6-73