HMMC-5620 Datasheet, PDF (3/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz High-Gain Amplifier

HMMC-5620 Applications
The HMMC-5620 amplifier is
designed for use as a general
purpose wideband, high gain
stage in communication systems
and microwave instrumentation.
It is ideally suited for broadband
applications requiring high gain
and excellent port matches over a
6 to 20 GHz frequency range.
Both RF input and output ports
are AC-coupled on chip.
Biasing and Operation
This amplifier is biased with a
single positive drain supply (V_DD).
The recommended bias for the
HMMC-5620 is V_DD = 5.0 V, which
results in I_DD = 100 mA (Typ.). No
other bias supplies or connections
to the device are required for 6 to
20 GHz operation. See Figure 3 for
assembly information.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 or 1.0 mil diameter Au
wire is recommended for D.C.
bonds. For RF bonds, MWTC
recommends low inductance
mesh interconnections for best
return loss performance. Tool
force should be 22 ± 1 gram, stage
temperature should be 150 ± 2°C,
and ultrasonic power and dura-
tion should be 64 ± 1 dB and
76␣ ± ␣ 8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Drain Bias
FEEDBACK
NTWK
RF Input
MATCHING
MATCHING
5
FEEDBACK
NTWK
5
GND
GND
Figure 1. HMMC-5620 Schematic.
GND
GND
MATCHING
FEEDBACK
NTWK
MATCHING
5
FEEDBACK
NTWK
RF Output
MATCHING
5
GND
GND
GND
GND
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