HMMC-5620 Datasheet, PDF (1/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz High-Gain Amplifier

6 – 20 GHz High-Gain Amplifier
Technical Data
HMMC-5620
Features
• Wide-Frequency Range:
6 – 20 GHz
• High Gain: 17 dB
• Gain Flatness: ± 1.0 dB
• Return Loss:
Input -15 dB
Output -15 dB
• Single Bias Supply
Operation
• Low DC Power Dissipation:
P_DC ~ 0.5 Watts
• Medium Power:
20 GHz: P_-1dB: 12 dBm
P_sat: 13 dBm
Description
The HMMC-5620 is a wideband
GaAs MMIC Amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply offers
ease of use. E-Beam lithography
is used to produce gate lengths of
≈ 0.3 µm. The HMMC-5620 incor-
porates advanced MBE technol-
ogy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1410 x 1010 µm (55.5 x 39.7 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
80 x 80 µm (2.95 x 2.95 mils), or larger
Absolute Maximum Ratings^[1]
Symbol Parameters/Conditions
Units Min. Max.
V_DD
Positive Drain Voltage
V
7.5
I_DD
Total Drain Current
mA
135
P_DC
DC Power Dissipation
watts
1.0
P_in
CW Input Power
dBm
20
T_ch
Operating Channel Temp.
°C
+160
T_case
Operating Case Temp.
°C
-55
T_STG
Storage Temperature
°C
-65 +165
T_max
Maximum Assembly Temp.
°C
(for 60 seconds maximum)
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T_A = 25°C except for T_ch, T_STG, and T_max.
5965-5442E
6-70