HMMC-5620 Datasheet, PDF (2/6 Pages) Agilent(Hewlett-Packard) – 6-20 GHz High-Gain Amplifier

HMMC-5620 DC Specifications/Physical Properties^[1]
Symbol Parameters and Test Conditions
I_DD
I_DD
θ_ch-bs
Drain Current (V_DD = +5.0 V)
Drain Current (V_DD = +7.0 V)
Thermal Resistance (T_backside = 25°C)
Note:
1. Measured in wafer form with T_chuck = 25°C. (Except θ_ch-bs).
Units
mA
mA
°C/W
Min.
70
Typ.
100
105
70
Max.
135
HMMC-5620 RF Specifications/Physical Properties
V_DD = 5.0 V, I_DD(Q) = 100 mA, Z_in =Z_o = 50 Ω^[1]
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
BW
Guaranteed Bandwidth
GHz
6
20
S₂₁
∆ S₂₁
RL _in
RL _out
S₁₂
P_-1dB
P_sat
H₂
Small Signal Gain
Small Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Second Harmonic Power Level (6 < ƒo < 20)
Po(ƒo) = 10 dBm
dB
dB
dB
dB
dB
dBm
dBm
dBc
15 17
21
± 1.0 ± 1.25
-15
-10
-15
-10
-55
12
13
-30
H₃
Third Harmonic Power Level (6 < ƒo < 20)
Po(ƒo) = 10 dBm
dBc
-40
NF
Noise Figure
dB
9.0
Note:
1. Small-signal data measured in wafer form with T_chuck = 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package at T_A = 25°C.
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