HMMC-5027 Datasheet, PDF (4/6 Pages) Agilent(Hewlett-Packard) – 2 - 26.5 Medium Power Amplifier

V_DD
Aux.
Drain
RF
Input
RF
Output
V_G2
Chip ID No.
V_G1
Aux. Gate
700
770 ⁴⁶⁵
(±10 µm)
220
0
70
(V_DD and Aux Drain Pads)
2910
(RF Output Pad)
555
285
75
70 (RF Input Pad)
Figure 2. HMMC-5027 Bonding Pad Locations.
1.5 mil dia.Gold Wire
Bond to ≥15 nF
DC Feedthru
4 nH Inductor
(1.0 mil Gold Wire Bond
with length of 200 mils)
2980 (± 10 µm)
2290
2580 2900
(V_G2 Pad)
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75 µm.
Octagonal Pad Dim: 90 µm dia.
All other dimensions ±5 µm (unless otherwise noted).
Chip thickness: 127 ± 15 µm.
≥68 pF Capacitor
Input and Output Thin Film
Circuit with ≥8 pF
DC Blocking Capacitor
Trace Offset
168 µm
(6.6 mils)
Gold Plated Shim
2.0 mil
nom. gap
V_DD
IN
OUT
V_G1
2.0 mil
nom. gap
0.7 mil dia. Gold Bond Wire
(Length NOT important)
Trace Offset
168 µm
(6.6 mils)
Bonding Island
1.5 mil dia.Gold Wire
Bond to ≥15 nF DC Feedthru
Figure 3. HMMC-5027 Assembly Diagram.
Note:
Total offset between RF input and RF
output pad is 335 µm (13.2 mils).
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