HMMC-5027 Datasheet, PDF (3/6 Pages) Agilent(Hewlett-Packard) – 2 - 26.5 Medium Power Amplifier

HMMC-5027 Applications
The HMMC-5027 series of travel-
ing wave amplifiers are designed
for use as general purpose
wideband power stages in
communication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are
designed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V_DD) and a single negative gate
supply (V_G1). The recommended
bias conditions for the
HMMC-5027 are V_DD = 8.0V,
I_DD␣ =␣ 250␣ mA or I _DSS, whichever is
less. To achieve this drain current
level, V_G1 is typically biased
between 0 V and -0.6 V. No other
bias supplies or connections to
the device are required for 2 to
26.5 GHz operation. The gate
voltage (V_G1) MUST be applied
prior to the drain voltage (V_DD)
during power up and removed
after the drain voltage during
power down. See Figure 3 for
assembly information.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below ≈ 1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V_G2) can be
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias potential is between +1.5
and +2.5 volts. Applying an
external bias between its open
circuit potential and -2.5 volts will
adjust the gain while maintaining
a good input/output port match.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22 ± 1 gram, stage
temperature should be 150 ± 2°C,
and ultrasonic power and dura-
tion should be 64 ± 1 dB and
76␣ ± ␣ 8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Drain Bias
(V_DD)
Aux. Drain
50
7.5
RF Input
30K
Figure 1. HMMC-5027 Schematic.
Seven Identical Stages
RF Output
248
248
15K
17K
Second Gate
Bias (V_G2)
50
5.5
Single Stage Shown
First Gate ^{Aux. Gate}
Bias (V_G1)
Notes:
FET gate periphery in microns.
All resistors in ohms. (Ω),
(or in K-ohms, where indicated)
6-49