HMMC-5027 Datasheet, PDF (1/6 Pages) Agilent(Hewlett-Packard) – 2 - 26.5 Medium Power Amplifier

H
2 – 26.5 Medium Power Amplifier
Technical Data
HMMC-5027
Features
• Wide-Frequency Range:
2 - 26.5 GHz
• Moderate Gain: 7 dB
• Gain Flatness: 1 dB
• Return Loss:
Input -13 dB
Output -11 dB
• Low-Frequency Operation
Capability: < 2 GHz
• Gain Control:
30 dB Dynamic Range
• Medium Power:
20 GHz: P_-1dB: 22 dBm
P_sat: 24 dBm
26.5 GHz: P_-1dB: 19 dBm
P_sat: 21 dBm
Description
The HMMC-5027 is a broadband
GaAs MMIC Traveling Wave
Amplifier designed for medium
output power and moderate gain
over the full 2 to 26.5 GHz
frequency range. Seven MESFET
cascode stages provide a flat gain
response, making the HMMC-5027
an ideal wideband power block.
Optical lithography is used to
produce gate lengths of ≈ 0.5 mm.
The HMMC-5027 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 770 µm (117.3 x 30.3 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
75 x 75 µm (2.95 x 2.95 mils), or larger
Absolute Maximum Ratings^[1]
Symbol Parameters/Conditions
Units Min. Max.
V_DD
Positive Drain Voltage
V
8.0
I_DD
Total Drain Current
mA
300
V_G1
First Gate Voltage
V
-5
0
I_G1
First Gate Current
mA
-1
+1
V_G2
Second Gate Voltage
V
-2.5 +5
I_G2
Second Gate Current
mA -25
P_DC
DC Power Dissipation
watts
2.4
P_in
CW Input Power
dBm
23
T_ch
Operating Channel Temp.
°C
+150
T_case
Operating Case Temp.
°C
-55
T_STG
Storage Temperature
°C
-65 +165
T_max
Maximum Assembly Temp.
(for 60 seconds maximum)
°C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T_A = 25°C except for T_ch, T_STG, and T_max.
6-47
5965-5447E