HMMC-5027 Datasheet, PDF (2/6 Pages) Agilent(Hewlett-Packard) – 2 - 26.5 Medium Power Amplifier

HMMC-5027 DC Specifications/Physical Properties ^[1]
Symbol Parameters and Test Conditions
Units
I_DSS
V_p
V_G2
I_DSOFF(V_G1)
I_DSOFF(V_G2)
θ_ch-bs
Saturated Drain Current
(V_DD = 8.0 V, V_G1 = 0.0 V, V_G2 = open circuit)
First Gate Pinch-off Voltage
(V_DD = 8.0 V, I_DD = 30 mA, V_G2 = open circuit)
Second Gate Self-Bias Voltage
(V_DD = 8.0 V, V_G1 = 0.0 V)
First Gate Pinch-off Current
(V_DD = 8.0 V, V_G1 = -3.5 V, V_G2 = open circuit)
Second Gate Pinch-off Current
(V_DD = 5.0 V, V_G1 = 0.0 V, V_G2 = -3.5 V)
Thermal Resistance (T_backside = 25°C)
mA
V
V
mA
mA
°C/W
Note:
1. Measured in wafer form with T_chuck = 25°C. (Except θ_ch-bs.)
Min.
200
Typ.
300
Max.
500
-2.2
-1.3
-.5
1.8
(0.27 x V_DD)
7
10
28
HMMC-5027 RF Specifications^[1],
T_op = 25°C, V_D1 = V_D2 = 5 V, V_G1 = V_G2= Open, Z_O = 50 Ω, unless otherwise noted
Symbol
BW
Parameters and Test Conditions
Guaranteed Bandwidth^[2]
Units Min. Typ. Max.
GHz
2
26.5
S₂₁
∆ S₂₁
RL_in
RL_out
S₁₂
P_-1dB
P_sat
H₂
H₃
NF
Small Signal Gain
Small Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @ 1dB Gain Compression
Saturated Output Power
Second Harmonic Power Level (2 < ƒo < 20)
[Po(ƒo) = 21 dBm or P_-1dB, whichever is less]
Third Harmonic Power Level (2 < ƒo < 20)
[Po(ƒo) = 21 dBm or P_-1dB, whichever is less]
Noise Figure
dB
6
7
dB
± 0.8
dB
-13
-10
dB
-11
-10
dB
-28
-25
dBm 16.5 19
dBm 18.5 21
dBc
-21
-18
dBc
-32
-18
dB
11
Notes:
1. Small-signal data measured in wafer form with T_chuck = 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package at T_A = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper corner
frequency ~ 30 GHz.
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