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HMC452QS16G_06 Datasheet, PDF (9/22 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
v01.0205
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Output IP3 vs. Temperature @ 1900 MHz
52
50
48
46
44
42
40
38
+25 C
36
+85 C
34
-40 C
32
30
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
Noise Figure vs.
Temperature @ 1900 MHz
10
9
8
7
6
5
4
+25 C
3
+85 C
2
-40 C
1
0
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 1900 MHz
0
+25 C
-5
+85 C
-40 C
-10
-15
-20
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
55
50
45
40
35
30
25
Gain
20
P1dB
Psat
15
OIP3
10
5
4.5
4.75
5
5.25
5.5
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
50
45
40
35
30
25
20
Gain
P1dB
15
Psat
OIP3
10
5
250
300
350
400
450
500
Icq (mA)
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
-25
-30
-35
CDMA2000
Frequency: 1.96 GHz
-40
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-45
-50
4.5V 5V 5.5V
-55
-60
-65
Source ACPR
-70
14
16
18
20
22
24
26
28
Channel Power (dBm)
5 - 260
* Icq is controlled by varying VPD.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com