HMC452QS16G_06 Datasheet, PDF (13/22 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

5
Pin Descriptions
Pin Number
Function
1, 2, 4, 5,
7-10, 13-16
GND
v01.0205
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Description
These pins & package bottom must be connected to
RF/DC ground.
Interface Schematic
Power control pin. For maximum power, this pin should be
3
VPD
connected to 5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
6
11, 12
RFIN
RFOUT
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
RF output and DC Bias input for the output amplifier stage.
Off chip matching components are required.
See Application Circuit herein.
400 MHz Application Circuit
This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
5 - 264
Note: C3 should be placed as close to pins as possible.
TL1
TL2
Impedance
50 Ohm 50 Ohm
Physical Length
0.11”
0.06”
Electrical Length
3°
2°
PCB Material: 10 mil Rogers 4350, Er = 3.48
TL3
50 Ohm
0.12”
3°
TL4
50 Ohm
0.04”
1°
TL5
50 Ohm
0.16”
4°
Recommended Component Values
C1, C2
12 pF
C3, C7
100 pF
C4, C5
6.8 pF
C6
39 pF
C8, C9
2.2 μF
L1
47 nH
L2
40 nH
L3
4.7 nH
L4
5.6 nH
R1
5.1 Ohms
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20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com