HMC452QS16G_06 Datasheet, PDF (12/22 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

v01.0205
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Power Dissipation
3
Max Pdiss @ +85C
2.5
1900 MHz
2
1.5
1
-5
900 MHz
0
5
10
15
20
INPUT POWER (dBm)
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 41.5 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
+5.3 Vdc
+31 dBm
150 °C
2.7 W
24.1 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
5
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC452QS16G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC452QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H452
XXXX
H452
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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